SiC has been discovered and used in industrial production for more than 100 years, but its use in power electronics is a recent decade or two. Its physical and electronic properties make SiC material devices have better high-temperature and high-voltage resistance than conventional Si materials, and thus can obtain higher power density and energy efficiency. Infineon has been continuously developing silicon carbide's cutting-edge technologies, products and solutions to meet users' needs for energy saving, efficiency enhancement, size reduction, system integration, and improved reliability.
One of the trends in the future development of power electronics is to use a higher switching frequency to achieve a tighter system design, so it is important to reduce the dynamic loss. Because of the intrinsic properties of SiC materials, the capacitance of SiC devices is quite small. In high frequency switching systems, small capacitance also means low switching losses. Because of the small device capacitance, SiC devices have significant advantages in high switching frequency high power applications:
SiC has obvious advantages in high switching frequency high power applications
If you need higher switching frequency, you need to use GaN material devices, but GaN material devices have limited power, because this has nothing to do, here is not a problem.
Take the Schottky diode structure diagram of the 5th-generation process of the Infineon CoolSiC series as an example to understand its features more intuitively:
From the following structure diagram, this structure is a combination of a Schottky diode and an ordinary PN junction diode. A Schottky diode is usually used. When the current is high, it is expressed as a PN junction diode (since at high current, the forward voltage drop of the PN junction diode is smaller than the Schottky diode). The SiC Schottky diodes of other manufacturers have more P-type doped regions above the N-type doped regions. This is the main structural difference, in order to combine the advantages of both diodes at the same time. The substrate is relatively thin to reduce VF and increase thermal conductivity.
Figure 5 Schottky diode structure diagram of Infineon CoolSiC series
At present, the application of SiC is still limited to a very small part of the power system. In the coming decades, it will be a period for SiC devices to obtain larger-scale applications. It is not only considering the energy consumption, but also the size and system stability of SiC. Adopted and more optimized. Currently, the representative manufacturer of SiC products on the market is Infineon's CoolSiCTM series. The current product series are:
CoolSiCTM MOSFET
CoolSiCTM Schottky Diodes
CoolSiCTM MOSFET Gate Driver IC
With silicon carbide technology, Infineon has introduced what leading-edge solutions? In the future, how will Infineon silicon carbide technology develop? It's better to let us come down to the next line. Your question, let me answer!
On May 16, 2018, Infineon will host the 2018 Infineon Silicon Carbide Development Forum at the Shenzhen Marriott Hotel Jinmao. At that time, industry experts will gather and we invite you to work with Infineon to discuss the general trend of the silicon carbide industry and share technological innovations. This event will help you to further understand the status and development of silicon carbide, take you to open the "core" chapter of silicon carbide, embrace the bright points of technological innovation "core" and share the "core" idea of silicon carbide technology.
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